Anglès
Sinopsi GaN-Based Laser Diodes
The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
EAN
9783642435485
Editorial
Any d'edició
2014
Idioma
Anglès
Col·lecció
Springer Theses
Alt
235
Ample
155
103,99 €
-5%
98,79 €
103.99 €
- 5 % DTE
98.79 €